Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias

Spin‐resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in spin electronics. However, the electron symmetry filtering breaks down under applied bias, dramatically reducing the TMR above 0.5 V. This strongly hampers the application range of MTJs. To circumvent the problem, resonant tunneling through quantum well states in thin layers has been used so far. This mechanism, however, is mainly effective at low temperatures. Here, a fundamentally different approach is demonstrated, providing a strong TMR boost under applied bias in V/MgO/Fe/MgO/Fe/Co hybrids. This pathway uses spin orbit coupling (SOC) controlled interfacial states in vanadium, which contrary to the V(001) bulk states are allowed to tunnel to Fe(001) at low biases. The experimentally observed strong increase of TMR with bias is modeled using two nonlinear resistances in series, with the low bias conductance of the first (V/MgO/Fe) element being boosted by the SOC‐controlled interfacial states, while the conductance of the second (Fe/MgO/Fe) junctions are controlled by the relative alignment of the ferromagnetic layers. These results pave a way to unexplored and fundamentally different spintronic device schemes, with tunneling magnetoresistance uplifted under applied electric bias. An unexplored and fundamentally different spintronic device scheme (V/MgO/Fe/MgO/Fe/Co hybrids) is presented, which not only allows to strongly uplift the tunneling magnetoresistance under applied electric bias due to Rashba spin orbit interaction, but also could lead to the development of a whole new class of room temperature magnetic field sensors with record high output voltage at biases exceeding 1 V.