Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

The SiC bipolar rectifier is a good alternative compared to the SiC Junction Barrier Schottky diode for applications requiring very high current capability for breakdown voltage higher than 3 kV. This paper reports on the influence of temperature on the electrical carrier lifetime of 3.3 kV 4H-SiC P...

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Veröffentlicht in:Materials science forum 2009, Vol.615-617, p.703-706
Hauptverfasser: Dheilly, Nicolas, Planson, Dominique, Brosselard, Pierre, Ul Hassan, Jawad, Bevilacqua, Pascal, Tournier, Dominique, Montserrat, Josep, Raynaud, Christophe, Morel, Hervé
Format: Artikel
Sprache:eng
Schlagworte:
Electric power
Engineering Sciences
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Zusammenfassung:The SiC bipolar rectifier is a good alternative compared to the SiC Junction Barrier Schottky diode for applications requiring very high current capability for breakdown voltage higher than 3 kV. This paper reports on the influence of temperature on the electrical carrier lifetime of 3.3 kV 4H-SiC PiN diodes processed with a new generation of SiC material.
ISSN:0255-5476
1662-9760
DOI:10.4028/www.scientific.net/MSF.615-617.703