Using wafer scale ferroelectric domains of LiNbO3 to form permanent planar p–n junction in narrow band gap nanocrystals

p–n junctions based on nanocrystals now serve as fundamental components in optoelectronics. However, the process of designing these p–n junctions has largely relied on empirical choices, either for ligand exchange or for the selection of charge transport layers. Therefore, a systematic strategy is still lacking. In this study, we explore the utilization of ferroelectric domains as a general method for remotely inducing the formation of a p–n junction. To ensure compatibility with devices of various designs, we employ a commercially available periodically poled LiNbO3 (PPLN) substrate commonly used in nonlinear optics. We engineer a PPLN/graphene/HgTe heterostructure and demonstrate its planar photodiode behavior. Through x-ray photoemission microscopy, we confirm that the rectifying behavior stems from the influence of the ferroelectric domains, by ruling out the possibility of the formation of non-ohmic contacts at the electrode/semiconductor interfaces. This approach proves to be quite general and holds promise for the future design of high-speed nanocrystal-based photodiodes.