Long catalyst-free InAs nanowires grown on silicon by HVPE

Long catalyst-free InAs nanowires grown on silicon by HVPE

We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.

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Veröffentlicht in:CrystEngComm 2021, Vol.23 (2), p.378-384
Hauptverfasser: Grégoire, Gabin, Gil, Evelyne, Zeghouane, Mohammed, Bougerol, Catherine, Hijazi, Hadi, Castelluci, Dominique, Dubrovskii, Vladimir, Trassoudaine, Agnès, Goktas, Nebile Isik, Lapierre, Ray, André, Yamina
Format: Artikel
Sprache:eng
Schlagworte:
Physics
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Zusammenfassung:We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.
ISSN:1466-8033
DOI:10.1039/d0ce01385d