Surface Reactivity of the Au‐Si‐Ho Quasicrystalline 1/1 Approximant

Surface Reactivity of the Au‐Si‐Ho Quasicrystalline 1/1 Approximant

The oxidation of the (100) surface of Au‐Si‐Ho quasicrystalline approximant was studied using low‐energy electron diffraction and X‐ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O2 adsorption, resulting in the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Israel journal of chemistry 2024-11, Vol.64 (10-11), p.n/a
Hauptverfasser: Mbajoun, Wilfried Bajoun, Huang, Yu‐Chin, Gebresenbut, Girma Hailu, Gómez, Cesar Pay, Fournée, Vincent, Ledieu, Julian
Format: Artikel
Sprache:eng
Schlagworte:
Approximants
Chemical Physics
Electron diffraction
Oxidation
Photoelectrons
Physics
Quasicrystals
Surface reactivity
Surface science
Surface segregation
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The oxidation of the (100) surface of Au‐Si‐Ho quasicrystalline approximant was studied using low‐energy electron diffraction and X‐ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O2 adsorption, resulting in the loss of surface long‐range order.
ISSN:0021-2148
1869-5868
DOI:10.1002/ijch.202300118