Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving material compatible with 1200 V vertical devices, in particular an unintentional doping level

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Microelectronic engineering 2023-03, Vol.273, p.111964, Article 111964
Hauptverfasser:	Kaltsounis, Thomas, Haas, Helge, Lafossas, Matthieu, Torrengo, Simona, Maurya, Vishwajeet, Buckley, Julien, Mariolle, Denis, Veillerot, Marc, Gueugnot, Alain, Mendizabal, Laurent, Cordier, Yvon, Charles, Matthew
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences GaN-on-Si Localized epitaxy Micro and nanotechnologies Microelectronics Scanning spreading resistance microscopy Unintentional doping
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving material compatible with 1200 V vertical devices, in particular an unintentional doping level
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2023.111964