Deposition and characterisation of c-axis oriented AlScN thin films via microwave plasma-assisted reactive HiPIMS

In this work, we demonstrate that highly oriented c-axis aluminium scandium nitride (AlScN) piezoelectric thin films can be deposited via microwave plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS), without the necessity of substrate heating. A combination of in situ plasma diagnostics, i.e. time-of-flight mass spectrometry (ToF-MS), modified quartz crystal microbalance (m-QCM), and magnetic field measurements allowed to optimise the deposition conditions, in turn maximising the nitrogen supply and ionic flux at the substrate region, while maintaining stable discharge conditions. The AlScN thin films synthesised in this study were deposited as chemically gradient coatings with varying levels of scandium doping, and were characterised using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD). Obtaining highly textured films was made possible with the addition of microwave plasma to the optimised HiPIMS discharge, where the wurtzite AlScN films (with up to 20 at. % Sc) exhibited a stronger texture in the (0002) orientation compared to films prepared without microwave plasma. Additionally, the use of a microwave plasma led to a significant decrease in oxygen content in the films and increase in nitrogen content, ensuring stoichiometric compositions. Based on the results mentioned above, it is expected that the AlScN thin films fabricated via MAR-HiPIMS would exhibit a strong piezoelectric response. •AlScN was deposited via a combination of R-HiPIMS and MW plasma.•In situ plasma diagnostics was performed to maximise ionic generation.•The microstructures of AlScN films were investigated for various Sc contents.•AlScN films containing up to 20 at.% Sc exhibited a strong c-axis orientation.•The use of MW plasma increased the crystal texturing in the (0002) orientation.