Electric Control of the Magnetic Domains in Artificial Magnetoelectric Composite Heterostructure
Magnetic force microscopy (MFM) has been used to probe the influence of an in situ applied in-plane elastic strains and/or magnetic field on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The film shows a typical magnetic stripe domain configuration with 180 nm m...
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Veröffentlicht in: | IEEE transactions on magnetics 2018-06, Vol.54 (6), p.1-6 |
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Sprache: | eng |
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Zusammenfassung: | Magnetic force microscopy (MFM) has been used to probe the influence of an in situ applied in-plane elastic strains and/or magnetic field on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The film shows a typical magnetic stripe domain configuration with 180 nm magnetic domain width presenting its magnetic moments oriented perpendicularly to the film plane. The in-plane strain was induced via the application of a voltage in a piezoelectric (PE) actuator on which the film/substrate system was glued. The FeCuNbSiB film was deposited onto a compliant polyimide substrate (Kapton) in order to avoid clamping effects that can lead to low transmission of strains from the actuator to the film/substrate system. The instrumental setup was modified with a custom-built electromagnet for performing in situ MFM experiments under the application of an in-plane magnetic field. We could compare the strain-mediated effect upon the magnetic domain configuration with the effect of an applied magnetic field. This paper clearly shows a better-defined electric field/strain control of the local domain magnetization (size and orientation). The efficient coupling between the magnetostrictive properties of the FeCuNbSiB film and the PE ones of the actuators allows a complete switching of the out-of-plane domain magnetization toward an in-plane homogeneous magnetic one. This magnetoelectric heterostructure can thus open the way for new devices allowing the electric control of the magnetic information at the nanoscale level. |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.2018.2815556 |