Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling

A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice...

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Veröffentlicht in:	Applied physics letters 1988-05, Vol.52 (22), p.1874-1876
Hauptverfasser:	Chami, A. C., Ligeon, E., Danielou, R., Fontenille, J., Lentz, G., Magnea, N., Mariette, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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