Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling

Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling

A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice...

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Veröffentlicht in:Applied physics letters 1988-05, Vol.52 (22), p.1874-1876
Hauptverfasser: Chami, A. C., Ligeon, E., Danielou, R., Fontenille, J., Lentz, G., Magnea, N., Mariette, H.
Format: Artikel
Sprache:eng
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Physics
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Zusammenfassung:A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice mismatch as low as Δa/a≂3×10−4. The formation energy of misfit dislocations is estimated to be about 10−8 J/m.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99610