Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

Article number 2200356 by Alistair C. H. Rowe and co‐workers presents results obtained using a novel experimental approach, scanning tunneling luminescence microscopy (STLM), to map light emission from step‐bunched silicon carbide surfaces known to house intense single photon emitters associated with nanoscale crystalline defects. STLM is able to spatially resolve photon emission down to this nanoscale. The cover image, made by co‐author Brett Johnson, is an artist’s rendition of the maps presented in the article. The “skyscrapers” indicate light emission from zones where defect densities are high (known as risers) while darker areas correspond to defect‐free crystalline terraces. The STLM tip hovers menacingly over the city. – This article belongs to the Special Section “Advances in Physics of Semiconductors” guest‐edited by Igor Aharonovich (see Editorial, 2300139).