Elementary Sisyphus process close to a dielectric surface
We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between t...
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Veröffentlicht in: | Physical review. A 1996-11, Vol.54 (5), p.4292-4298 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between their two hyperfine levels; this leads to an efficient cooling since those levels are light shifted by a different amount by the laser-atom interaction thanks to the large hyperfine splitting. We compare the measured final energy distributions after the bounce with Monte Carlo simulations. A quantitative agreement is obtained when the van der Waals interaction between the cesium atoms and the dielectric prism is taken into account. © 1996 The American Physical Society. |
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ISSN: | 1050-2947 2469-9926 1094-1622 2469-9934 |
DOI: | 10.1103/PhysRevA.54.4292 |