Elementary Sisyphus process close to a dielectric surface

We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between t...

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Veröffentlicht in:Physical review. A 1996-11, Vol.54 (5), p.4292-4298
Hauptverfasser: Desbiolles, P, Arndt, M, Szriftgiser, P, Dalibard, J
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between their two hyperfine levels; this leads to an efficient cooling since those levels are light shifted by a different amount by the laser-atom interaction thanks to the large hyperfine splitting. We compare the measured final energy distributions after the bounce with Monte Carlo simulations. A quantitative agreement is obtained when the van der Waals interaction between the cesium atoms and the dielectric prism is taken into account. © 1996 The American Physical Society.
ISSN:1050-2947
2469-9926
1094-1622
2469-9934
DOI:10.1103/PhysRevA.54.4292