Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance

The present work assesses improved carrier injection in organic field-effect transistors by contact doping and provides fundamental insight into the multiple impacts that the dopant/semiconductor interface details have on the long-term and thermal stability of devices. We investigate donor [1]­benzo...

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Veröffentlicht in:ACS applied materials & interfaces 2020-06, Vol.12 (25), p.28416-28425
Hauptverfasser: Babuji, Adara, Temiño, Inés, Pérez-Rodríguez, Ana, Solomeshch, Olga, Tessler, Nir, Vila, Maria, Li, Jinghai, Mas-Torrent, Marta, Ocal, Carmen, Barrena, Esther
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Sprache:eng
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Zusammenfassung:The present work assesses improved carrier injection in organic field-effect transistors by contact doping and provides fundamental insight into the multiple impacts that the dopant/semiconductor interface details have on the long-term and thermal stability of devices. We investigate donor [1]­benzothieno­[3,2-b]-[1]­benzothiophene (BTBT) derivatives with one and two octyl side chains attached to the core, therefore constituting asymmetric (BTBT-C8) and symmetric (C8-BTBT-C8) molecules, respectively. Our results reveal that films formed out of the asymmetric BTBT-C8 expose the same alkyl-terminated surface as the C8-BTBT-C8 films do. In both cases, the consequence of depositing fluorinated fullerene (C60F48) as a molecular p-dopant is the formation of C60F48 crystalline islands decorating the step edges of the underlying semiconductor film surface. We demonstrate that local work function changes along with a peculiar nanomorphology lead to the double beneficial effect of lowering the contact resistance and providing long-term and enhanced thermal stability of the devices.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.0c06418