Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated with swift heavy ions at different energies and fluences, and thereafter studied by Raman scattering spectroscopy, UV–visible spectroscopy and transmission electron microscopy. Raman spectra show strong structural modifications in the GaN layer. Indeed, in addition to the broadening of the allowed modes, a large continuum and three new modes at approximately 200cm−1, 300cm−1 and 670cm−1 appear after irradiation attributed to disorder-activated Raman scattering. In this case, spectra are driven by the phonon density of states of the material due to the loss of translation symmetry of the lattice induced by defects. It was shown qualitatively that both electronic excitations and elastic collisions play an important role in the disorder induced by irradiation. UV–visible spectra reveal an absorption band at 2.8eV which is linked to the new mode at 300cm−1 observed in irradiated Raman spectra and comes from Ga-vacancies. These color centers are produced by elastic collisions (without any visible effect of electronic excitations).