Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

This paper reports a reliability study on two technologies of AlGaN/GaN high-electron mobility transistors (AlGaN/GaN HEMTs) (Device “A” and Device “B”). A failure analysis study is conducted on devices stressed under real operating conditions for radar applications. The devices underwent pulsed-RF...

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Veröffentlicht in:	Microelectronics and reliability 2021-11, Vol.126, p.114295, Article 114295
Hauptverfasser:	Moultif, N., Duguay, S., Latry, O., Ndiaye, M., Joubert, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atom probe tomography (APT) Electron beam induced current (EBIC) Electronics Engineering Sciences Failure analysis Gallium nitride high-electron mobility transistors (GaN HEMTs) Materials Micro and nanotechnologies Microelectronics Optical beam induced resistance change (OBIRCH) Photon emission microscopy (PEM) Reliability RF-stress
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