Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi‐1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into a nove...

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Veröffentlicht in:	Advanced electronic materials 2021-03, Vol.7 (3), p.n/a
Hauptverfasser:	Böckle, Raphael, Sistani, Masiar, Eysin, Kilian, Bartmann, Maximilian G., Luong, Minh Anh, den Hertog, Martien I., Lugstein, Alois, Weber, Walter M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter gate‐tunable resistance germanium heterostructures Materials Science nanowires negative differential resistance Physics
Online-Zugang:	Volltext
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