Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi‐1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into a novel field‐effect transistor architecture capable of combining Ge based electronics with an electrostatically tunable negative differential resistance (NDR) distinctly observable at room temperature. In this regard, a detailed study of the key metrics of NDR in Ge is presented. Most notably, a highly efficient and low‐footprint platform is demonstrated, paving the way for potential applications such as fast switching multi‐valued logic devices, static memory cells, or high‐frequency oscillators, all implemented in one fully complementary metal–oxide–semiconductor compatible Al‐Ge based device platform. Nanoscale Ge is considered a key building block extending device performance and delivering enhanced functionalities. Here, a highly efficient and low‐footprint architecture comprising doping‐free Ge and monocrystalline Al nanowire contacts revealing a strong and reproducible electrostatically tunable negative differential resistance (NDR) at room temperature is demonstrated. Most notably, a systematic study of the key performance metrics of NDR is presented.