Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm2/V.s at 450K. Its electrical properties are compared to those measured on conventionally oriented (100) and (111) homoepilayers synthetized in the same reactor with similar phosphorus content (∼1–2x1018 at/cm3). The (113) layer presents higher electron mobility than the (100) film, despite a comparable compensation ratio. Besides, above 450 K the (113) electron mobility is also higher than the one of the low compensated (111) sample. This shows the attractive character of the (113) diamond orientation for n-type doping. [Display omitted]