WTe2 Synthesis by Tellurization of W Precursors Using Isothermal Close Space Vapor Transport Annealing

The preparation of WTe2 by isothermal tellurium annealing of sputtered W or WO3 precursors is reported. X‐ray diffraction, energy dispersive, and Raman spectroscopies confirm the presence of 1T́ WTe2 phase in the annealed films which are preferentially oriented with the [001] crystallographic direction normal to the surface. Atomic force microscopy images indicate noticeable morphology differences between thin samples tellurized from different precursors. Rounded small grains or small platelets are obtained when W and WO3 precursor are used, respectively. WTe2 is an important member of the transition metals dichalcogenides family. In this paper, WTe2 films are prepared by isothermal tellurium annealing of sputtered W or WO3 films in a close space configuration. Despite the used precursor, films show preferential orientation with the [001] direction oriented normal to the surface. Rounded grains/platelets are obtained when using W/WO3 precursors.