Characterization of the temperature behavior of optimized SiC gratings emissivity

•We study the temperature behavior of optimized SiC gratings emissivity.•We show experimentally the emissivity peak shift with the temperature.•We present the impact of different geometrical and structural parameters. By exploiting experimentally measured optical properties of Silicon Carbide (SiC) at different temperatures, we recently showed based on a numerical analysis, that when SiC grating is heated, the position of its emissivity peak shifts towards higher wavelength values and its amplitude decreases. This proved the necessity to adapt the parameters of the grating to the temperature of measurements. In this previous article, we performed only numerical simulations for ideal devices. In order to check the validity of these results, we need some verifications from both the experimental and numerical points of view. In the herein study, we milled gratings on the same type of SiC for which the optical properties measurements were conducted. Then, we performed reflectivity measurements as a function of wavelength and temperature, in order to experimentally show the peak shift and to validate our optimized gratings. Hereby, this work provides guidelines for the design of optimized coherent thermal sources for different temperatures based on a combined numerical and experimental analysis.