Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV - photoluminescence band

We have produced two types of synthetic nanodiamonds Si- and Si,P-doped and have characterized the thermal susceptibilities of the spectral band of silicon-vacancy (SiV ) centers at approximately 740 nm in each case. The covered temperature range from 295 to 350 K is of interest for thermometry in b...

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Veröffentlicht in:	Nanotechnology 2020-05, Vol.31 (20), p.205709-205709
Hauptverfasser:	Choi, Sumin, Agafonov, Viatcheslav N, Davydov, Valery A, Kulikova, Ludmila F, Plakhotnik, Taras
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustics Mechanics Physics
Online-Zugang:	Volltext
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