Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film

Methods are presented determining the Gibbs triple junction excess ( Γ TJ ) of solute segregation in polycrystalline materials from single atom counting in 3D volumes. One method bases on cumulative profile analysis, while two further methods use radial integration of solute atoms. The methods are demonstrated and compared on simulated model volumes which include three grain boundaries joining together at a triple junction with set values for Gibbs grain boundary and triple junction excess. An experimental technique that provides 3D volumes with single atom detection and spatial resolution close to atomic scale is atom probe tomography. An atom probe tomography volume of a CoSi 2 thin film that contains three grain boundaries and a triple junction has been acquired. Ti segregation is found qualitatively at the grain boundaries and triple junction. The quantification of the Ti excess at the investigated CoSi 2 triple junction reveals for the three introduced methods positive Gibbs triple junction excess values. It demonstrates that there is an excess of Ti at CoSi 2 triple junctions and provides opportunities for its quantification.