Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents

Spin orbit torque driven switching is a favorable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here, we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in situ characterization using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, with multilevel switching demonstrated. The result is that spin-switching current densities, down to 800 kA cm–2, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements but also neuromorphic and probabilistic computing.