Thermoelectric power factor of Ge1-xSnx thin films

The Seebeck coefficients (α) and the power factors of 100 nm-thick Ge1-xSnx films grown by magnetron sputtering were studied versus Sn composition (0.09 ≤ x ≤ 0.15) in the 220−330 K temperature range. The films present particularly high Seebeck coefficients at room temperature but as they are undoped, their power factors are too low for room temperature thermoelectric applications due to low electrical conductivity (σ). Nevertheless, as it is possibile to modify both α and σ by adjusting x, as well as employ conventional doping techniques, the IV-IV Ge1-xSnx semiconductor is shown to be extremely interesting for complementary-metal-oxide-semiconductor-compatible thermoelectric applications. [Display omitted]