The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

Hot-carrier stressing carried out on conventional and MDD n-MOS transistors under low gate voltage conditions (V/sub g/

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1990-08, Vol.37 (8), p.1869-1876
Hauptverfasser: Doyle, B.S., Bourcerie, M., Bergonzoni, C., Benecchi, R., Bravis, A., Mistry, K.R., Boudou, A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Character generation
Charge carrier processes
Charge pumps
Degradation
Electron traps
Electronics
Engineering Sciences
Exact sciences and technology
Hot carrier effects
Hot carriers
Interface states
Low voltage
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Transistors
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Beschreibung
Zusammenfassung:Hot-carrier stressing carried out on conventional and MDD n-MOS transistors under low gate voltage conditions (V/sub g/
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57138