ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates

[Display omitted] •N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or n...

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Veröffentlicht in:Sensors and actuators. A. Physical. 2020-11, Vol.315, p.112261, Article 112261
Hauptverfasser: Garcia Castro, Fatima, de Sagazan, Olivier, Coulon, Nathalie, Simon, Claude, Le Bihan, France
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container_issue
container_start_page 112261
container_title Sensors and actuators. A. Physical.
container_volume 315
creator Garcia Castro, Fatima
de Sagazan, Olivier
Coulon, Nathalie
Simon, Claude
Le Bihan, France
description [Display omitted] •N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD. Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.
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subjects Chemical vapor deposition
Chemicals
Contact resistance
Crystal structure
Crystallinity
Engineering Sciences
flexible electronics
ICP-CVD
Inductively coupled plasma
Low temperature
low temperature electronics, strain gauges fabrication
Optimization
Parameter identification
PECVD
Pressure sensors
Sensors
Silicon substrates
Strain Gauges
Substrates
Temperature
TLM
μ-Si doped
title ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates
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