ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates
[Display omitted] •N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or n...
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Veröffentlicht in: | Sensors and actuators. A. Physical. 2020-11, Vol.315, p.112261, Article 112261 |
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creator | Garcia Castro, Fatima de Sagazan, Olivier Coulon, Nathalie Simon, Claude Le Bihan, France |
description | [Display omitted]
•N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD.
Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors. |
doi_str_mv | 10.1016/j.sna.2020.112261 |
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•N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD.
Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2020.112261</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Chemical vapor deposition ; Chemicals ; Contact resistance ; Crystal structure ; Crystallinity ; Engineering Sciences ; flexible electronics ; ICP-CVD ; Inductively coupled plasma ; Low temperature ; low temperature electronics, strain gauges fabrication ; Optimization ; Parameter identification ; PECVD ; Pressure sensors ; Sensors ; Silicon substrates ; Strain Gauges ; Substrates ; Temperature ; TLM ; μ-Si doped</subject><ispartof>Sensors and actuators. A. Physical., 2020-11, Vol.315, p.112261, Article 112261</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Nov 1, 2020</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-87711672024d87615c1df123e7ee68e49179b361f3e909de1ca752392c6a99683</citedby><cites>FETCH-LOGICAL-c402t-87711672024d87615c1df123e7ee68e49179b361f3e909de1ca752392c6a99683</cites><orcidid>0000-0003-0747-8800</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sna.2020.112261$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,315,781,785,886,3551,27926,27927,45997</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02960162$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Garcia Castro, Fatima</creatorcontrib><creatorcontrib>de Sagazan, Olivier</creatorcontrib><creatorcontrib>Coulon, Nathalie</creatorcontrib><creatorcontrib>Simon, Claude</creatorcontrib><creatorcontrib>Le Bihan, France</creatorcontrib><title>ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates</title><title>Sensors and actuators. A. Physical.</title><description>[Display omitted]
•N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD.
Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.</description><subject>Chemical vapor deposition</subject><subject>Chemicals</subject><subject>Contact resistance</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Engineering Sciences</subject><subject>flexible electronics</subject><subject>ICP-CVD</subject><subject>Inductively coupled plasma</subject><subject>Low temperature</subject><subject>low temperature electronics, strain gauges fabrication</subject><subject>Optimization</subject><subject>Parameter identification</subject><subject>PECVD</subject><subject>Pressure sensors</subject><subject>Sensors</subject><subject>Silicon substrates</subject><subject>Strain Gauges</subject><subject>Substrates</subject><subject>Temperature</subject><subject>TLM</subject><subject>μ-Si doped</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAHaRWLFI8U9ix2JVFfqDIhWpwNZykwk4SpNiJxXlbJyBM-EqiCWr0cy8N3rzIXRJ8Ihgwm_Kkav1iGLqe0IpJ0doQBLBQoa5PEYDLGkURjQSp-jMuRJjzJgQA_SwmDyGk5e74PsrXJkg1XuwLlhuW7Mxn7o1TR0UjQ1WrdWmDma6ewUX-OG0gg-zriBYdWvnly24c3RS6MrBxW8doufp_dNkHqbL2WIyTsMswrQNEyEI4cJHjfJEcBJnJC8IZSAAeAKRJEKuGScFA4llDiTTIqZM0oxrKXnChui6v_umK7W1ZqPtXjXaqPk4VYcZppJ7JnRHvfaq125t896Ba1XZdLb28ZRnIXGcRHHsVaRXZbZxzkLxd5ZgdcCrSuXxqgNe1eP1ntveA_7VnQGrXGagziA3FrJW5Y35x_0DARR_LA</recordid><startdate>20201101</startdate><enddate>20201101</enddate><creator>Garcia Castro, Fatima</creator><creator>de Sagazan, Olivier</creator><creator>Coulon, Nathalie</creator><creator>Simon, Claude</creator><creator>Le Bihan, France</creator><general>Elsevier B.V</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0003-0747-8800</orcidid></search><sort><creationdate>20201101</creationdate><title>ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates</title><author>Garcia Castro, Fatima ; de Sagazan, Olivier ; Coulon, Nathalie ; Simon, Claude ; Le Bihan, France</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-87711672024d87615c1df123e7ee68e49179b361f3e909de1ca752392c6a99683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical vapor deposition</topic><topic>Chemicals</topic><topic>Contact resistance</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Engineering Sciences</topic><topic>flexible electronics</topic><topic>ICP-CVD</topic><topic>Inductively coupled plasma</topic><topic>Low temperature</topic><topic>low temperature electronics, strain gauges fabrication</topic><topic>Optimization</topic><topic>Parameter identification</topic><topic>PECVD</topic><topic>Pressure sensors</topic><topic>Sensors</topic><topic>Silicon substrates</topic><topic>Strain Gauges</topic><topic>Substrates</topic><topic>Temperature</topic><topic>TLM</topic><topic>μ-Si doped</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Garcia Castro, Fatima</creatorcontrib><creatorcontrib>de Sagazan, Olivier</creatorcontrib><creatorcontrib>Coulon, Nathalie</creatorcontrib><creatorcontrib>Simon, Claude</creatorcontrib><creatorcontrib>Le Bihan, France</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Garcia Castro, Fatima</au><au>de Sagazan, Olivier</au><au>Coulon, Nathalie</au><au>Simon, Claude</au><au>Le Bihan, France</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2020-11-01</date><risdate>2020</risdate><volume>315</volume><spage>112261</spage><pages>112261-</pages><artnum>112261</artnum><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>[Display omitted]
•N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD.
Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2020.112261</doi><orcidid>https://orcid.org/0000-0003-0747-8800</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Chemical vapor deposition Chemicals Contact resistance Crystal structure Crystallinity Engineering Sciences flexible electronics ICP-CVD Inductively coupled plasma Low temperature low temperature electronics, strain gauges fabrication Optimization Parameter identification PECVD Pressure sensors Sensors Silicon substrates Strain Gauges Substrates Temperature TLM μ-Si doped |
title | ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates |
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