ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates

[Display omitted] •N doped μ-Si films from ICP-CVD used SiH4 diluted in Ar/H2 mixture to reach high quality.•ICP-CVD technic allow a wider field of use with pulsed mode, single ICP or RF bias add.•Links between resistivity and gauge factor could be modified by ICP deposition mode.•Concentration or nature of dopant have strong impact on μ-Si gauge factor.•High power ICP pulses enhanced gauge factor increase compare to standard PECVD. Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.