Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction
The big concern with using silicon as a substrate for making Ge and III-V devices is the dislocation density in the epilayers. Dislocations degrade device performance by trapping the photo-generated carriers, dragging down efficiency. In this manuscript, a Ge/Si substrate is treated with a post epit...
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Veröffentlicht in: | ECS transactions 2020-09, Vol.98 (5), p.527-532 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The big concern with using silicon as a substrate for making Ge and III-V devices is the dislocation density in the epilayers. Dislocations degrade device performance by trapping the photo-generated carriers, dragging down efficiency. In this manuscript, a Ge/Si substrate is treated with a post epitaxial process to create a region with a high density of nanovoids within the Ge/Si structure, which acts as a free surface that attracts dislocations, facilitating the subsequent annihilation of their threading arms. Nanovoids are formed in the Ge layer by electrochemical porosification, followed by thermal annealing, creating a new configuration referred to as nanovoid-based Ge/Si virtual substrate (NVS). |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/09805.0527ecst |