Formation of tetrahedral islands in epitaxial NiO layers deposited on MgO(1 1 1)

We studied NiO layers epitaxially grown on a stabilized MgO(1 1 1) substrate at various temperatures between 700°C and 900°C. The epitaxial growth and surface structures were investigated using reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and high resolutio...

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Veröffentlicht in:Journal of crystal growth 2002-02, Vol.234 (4), p.704-710
Hauptverfasser: Warot, B, Snoeck, E, Baulès, P, Ousset, J.C, Casanove, M.J, Dubourg, S, Bobo, J.F
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Sprache:eng
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Zusammenfassung:We studied NiO layers epitaxially grown on a stabilized MgO(1 1 1) substrate at various temperatures between 700°C and 900°C. The epitaxial growth and surface structures were investigated using reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and high resolution transmission electron microscopy. The experiments indicate that nickel oxide tetrahedra with {1 0 0} facets have grown on the surface. We present the evolution of the surface morphology as a function of deposition temperature and thickness. The role of the surface energy minimization in the occurrence of tetrahedral islands is demonstrated.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01767-5