Formation of tetrahedral islands in epitaxial NiO layers deposited on MgO(1 1 1)
We studied NiO layers epitaxially grown on a stabilized MgO(1 1 1) substrate at various temperatures between 700°C and 900°C. The epitaxial growth and surface structures were investigated using reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and high resolutio...
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Veröffentlicht in: | Journal of crystal growth 2002-02, Vol.234 (4), p.704-710 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We studied NiO layers epitaxially grown on a stabilized MgO(1
1
1) substrate at various temperatures between 700°C and 900°C. The epitaxial growth and surface structures were investigated using reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and high resolution transmission electron microscopy. The experiments indicate that nickel oxide tetrahedra with {1
0
0} facets have grown on the surface. We present the evolution of the surface morphology as a function of deposition temperature and thickness. The role of the surface energy minimization in the occurrence of tetrahedral islands is demonstrated. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/S0022-0248(01)01767-5 |