Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the per...

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Veröffentlicht in:Optik (Stuttgart) 2019-12, Vol.199, p.163385, Article 163385
Hauptverfasser: Chouchen, Bilel, Aouami, Asmae El, Gazzah, Mohamed Hichem, Bajahzar, Abdullah, Feddi, El Mustapha, Dujardin, Francis, Belmabrouk, Hafedh
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Sprache:eng
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Condensed Matter
InGaN/GaN
Photovoltaic parameters
Physics
Polarization effects
Solar cell
Temperature
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container_start_page 163385
container_title Optik (Stuttgart)
container_volume 199
creator Chouchen, Bilel
Aouami, Asmae El
Gazzah, Mohamed Hichem
Bajahzar, Abdullah
Feddi, El Mustapha
Dujardin, Francis
Belmabrouk, Hafedh
description Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the performance of the InGaN/GaN MQW by tuning the electronic properties and by introducing the impact of the polarization of heterostructures with N-face and for an optimal indium composition.
doi_str_mv 10.1016/j.ijleo.2019.163385
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subjects Condensed Matter
InGaN/GaN
Photovoltaic parameters
Physics
Polarization effects
Solar cell
Temperature
title Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells
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