Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the performance of the InGaN/GaN MQW by tuning the electronic properties and by introducing the impact of the polarization of heterostructures with N-face and for an optimal indium composition.