SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

: The large band gap (3.58 eV) and dielectric properties ( ε r =50) of bulk SrHf 0.67 Ti 0.33 O 3 (SHTO) make it a promising high- k material. SHTO films were deposited on p -type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance–voltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10 −4 A/cm 2 at −2 V bias voltage.