Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS 2 and Other Transition-Metal Dichalcogenides

Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magne-toresistance (MR) signals are very difficult to obtain and, when they finally are, they are often fa...

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Veröffentlicht in:Physical review applied 2019, Vol.12 (4)
Hauptverfasser: Galbiati, Marta, Tatay, Sergio, Dubois, Simon M.-M, Godel, Florian, Galceran, Regina, Mañas-Valero, Samuel, Piquemal-Banci, Maëlis, Vecchiola, Aymeric, Charlier, Jean-Christophe, Forment-Aliaga, Alicia, Coronado, Eugenio, Dlubak, Bruno, Seneor, Pierre
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Sprache:eng
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Zusammenfassung:Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magne-toresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS 2 /Co spin valves with mechanically exfoliated mul-tilayer MoS 2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large MR of 5%. Beyond interfaces and material quality, we suggest that an overlooked more fundamental physics issue related to spin-current depolarization could explain the limited MR observed so far in MoS 2-based magnetic tunnel junctions. This points to a path towards the observation of larger spin signals in line with theoretical predictions above 100%. We envision the impact of our work to be beyond MoS 2 and its broader transition-metal dichalcogenides family by opening the way to an accelerated screening of other 2D materials that are yet to be explored for spintronics.
ISSN:2331-7019
2331-7019
DOI:10.1103/PhysRevApplied.12.044022