Purcell effect on CdSe/ZnSe quantum dots em bedded in pillar microcavities

We present results on two approaches for placing II‐VI quantum dots in resonance with a pillar microcavity. The first approach consists in growing a fully epitaxial structure: a ZnTe 3λ/2 cavity containing CdTe quantum dots sandwiched between two CdMgTe/CdZnMgTe distributed Bragg reflectors. We obse...

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Veröffentlicht in:Physica status solidi. C 2005-11, Vol.2 (11), p.3829-3832
Hauptverfasser: Robin, I.C., André, R., Balocchi, A., Carayon, S., Gérard, J.M., Kheng, K., Dang, Le Si, Mariette, H., Moehl, Sebastien, Tinjod, Frank
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Sprache:eng
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Zusammenfassung:We present results on two approaches for placing II‐VI quantum dots in resonance with a pillar microcavity. The first approach consists in growing a fully epitaxial structure: a ZnTe 3λ/2 cavity containing CdTe quantum dots sandwiched between two CdMgTe/CdZnMgTe distributed Bragg reflectors. We observed a strong enhancement of the emission intensity for a dot well located into a 0.9 µm diameter pillars. More striking results were obtained using CdSe QDs in a λ/2 ZnSe cavity sandwiched between SiO2/TiO2 Bragg reflectors. We probed the Purcell effect by time‐resolved photoluminescence and intensity saturation measurements performed on single quantum dots located in a 1.1 µm diameter hybrid pillar. A four‐fold enhancement of quantum dot spontaneous emission rate is observed for quantum dots in resonance with excited degenerated modes of the pillar. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200562011