Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominal...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.85-87
Hauptverfasser: Najjar, Rita, André, Régis, Besombes, Lucien, Bougerol, Catherine, Tatarenko, Serge, Mariette, Henri
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Optical properties
Physics
Semiconductors
Type-II heterostructures
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Zusammenfassung:Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominally identical samples can evolve into two-dimensional quantum well or quantum dot plane, depending on which element is in excess. Transmission electron microscopy, atomic force microscopy and optical characterizations evidence this phenomenon.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2009.02.014