Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices

We present a unifying scheme for the hydrodynamic calculation of electronic noise in semiconductor devices operating under various conditions. In the framework of the Green-function formalism the noise sources corresponding to the Langevin forces originated by single scattering events are included into the equations describing medium properties. The scheme is validated by numerical calculations of the voltage and current noise in submicron n +nn + GaAs structures.