Optical study of the anisotropic erbium spin flip-flop dynamics

We investigate the erbium flip-flop dynamics as a limiting factor of the electron-spin lifetime and more generally as an indirect source of decoherence in rare-earth-doped insulators. Despite the random isotropic arrangement of dopants in the host crystal, the dipolar interaction strongly depends on the magnetic field orientation following the strong anisotropy of the g factor. In Er3+:Y2SiO5, we observe in a 10-ppm doped sample a 3 orders-of-magnitude variation of the erbium flip-flop rate, as expected from the dipolar coupling term between identical spins with an anisotropic g tensor. We can estimate the correct order of magnitude for a 50-ppm concentration, but we can only reproduce qualitatively the orientational variation of the flip-flop rate.