Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.
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| Veröffentlicht in: | Advanced materials technologies 2019-10, Vol.4 (10) |
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| container_title | Advanced materials technologies |
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| creator | Ayari, Taha Sundaram, Suresh Bishop, Chris Mballo, Adama Vuong, Phuong Halfaya, Yacine Karrakchou, Soufiane Gautier, Simon Voss, Paul B Salvestrini, Jean-Paul Ougazzaden, Abdallah |
| description | In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation. |
| doi_str_mv | 10.1002/admt.201970057 |
| format | Article |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Engineering Sciences Materials |
| title | Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) |
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