Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.