Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 μC/cm2 for both samples, but a strong difference is observed in the electri...

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Veröffentlicht in:ACS applied electronic materials 2019-09, Vol.1 (9), p.1740-1745
Hauptverfasser: Bouaziz, Jordan, Romeo, Pedro Rojo, Baboux, Nicolas, Vilquin, Bertrand
Format: Artikel
Sprache:eng
Schlagworte:
Chemical Sciences
Condensed Matter
Engineering Sciences
Material chemistry
Materials
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
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Zusammenfassung:The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 μC/cm2 for both samples, but a strong difference is observed in the electrical behavior. For the mesa sample, the difference between the maximum and initial remanent polarization is only 3 μC/cm2, whereas it is around 14 μC/cm2 in the non-mesa case. We discuss the root causes of these behaviors in light of GIXRD results.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.9b00367