Alloying effects in self-assembled InAs/InP dots

We have studied the influence of alloying induced chemical exchange reactions on the formation of self-assembled InAs dots prepared on InP and In 0.52Al 0.48As buffers lattice-matched to InP(001). Atomic force microscopy and low-temperature photoluminescence measurements have been used to characterize the dot properties. Strong differences in the islanding process are observed depending on the growth conditions and on the nature of the buffer layer. They are associated to variation in intermixing between the InAs deposit and the buffer layer.