Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the...

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Veröffentlicht in:Materials science forum 2011-03, Vol.679-680, p.567-570
Hauptverfasser: Tournier, Dominique, Nguyen, Duy Minh, Planson, Dominique, Konrath, Jens Peter, Pâques, Gontran, Dheilly, Nicolas, Scharnholz, Sigo, Raynaud, Christophe
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Electric power
Engineering Sciences
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container_issue
container_start_page 567
container_title Materials science forum
container_volume 679-680
creator Tournier, Dominique
Nguyen, Duy Minh
Planson, Dominique
Konrath, Jens Peter
Pâques, Gontran
Dheilly, Nicolas
Scharnholz, Sigo
Raynaud, Christophe
description Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).
doi_str_mv 10.4028/www.scientific.net/MSF.679-680.567
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fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02168909v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_02168909v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-8938744ad56b2f8298b035fdab2a3717b7c980cc6ec04018fcbb6c77b95ce4e83</originalsourceid><addsrcrecordid>eNqVkE1LAzEQhoMoWKv_IVeF3Sb7kY9jba0VKhZaTx5CNp2lKdtsyaYu_ntTKnr2NDDzzgPvg9ADJWlBMjHq-z7tjAUXbG1N6iCMXlezlHGZMEHSkvELNKCMZYnkZXaJBiQry6QsOLtGN123IySngrIB-hh_6kY7swU8te0GOtzbsMWLtsdr2B_A63D08QYHcBtwBrB1uJgnKzvBq6MNumoA163HS-1100CDl74NYIJt3S26qnXTwd3PHKL32dN6Mk8Wb88vk_EiMTmTIREyF7wo9KZkVVaLTIqK5GW90VWmc055xY0UxBgGhhSEitpUFTOcV7I0UIDIh-j-zN3qRh283Wv_pVpt1Xy8UKcdySgTkshPGrOP56zxbdd5qH8fKFEntSqqVX9qVVSroloV1aqoVkW1ETI9Q4LXrottt2rXHr2LJf-D-QZQs4yk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection</title><source>Scientific.net Journals</source><creator>Tournier, Dominique ; Nguyen, Duy Minh ; Planson, Dominique ; Konrath, Jens Peter ; Pâques, Gontran ; Dheilly, Nicolas ; Scharnholz, Sigo ; Raynaud, Christophe</creator><creatorcontrib>Tournier, Dominique ; Nguyen, Duy Minh ; Planson, Dominique ; Konrath, Jens Peter ; Pâques, Gontran ; Dheilly, Nicolas ; Scharnholz, Sigo ; Raynaud, Christophe</creatorcontrib><description>Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>EISSN: 1662-9760</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.679-680.567</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Electric power ; Engineering Sciences</subject><ispartof>Materials science forum, 2011-03, Vol.679-680, p.567-570</ispartof><rights>2011 Trans Tech Publications Ltd</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c369t-8938744ad56b2f8298b035fdab2a3717b7c980cc6ec04018fcbb6c77b95ce4e83</cites><orcidid>0000-0002-1617-8757 ; 0000-0001-7473-0039 ; 0000-0003-4671-0844</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/1230?width=600</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02168909$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Tournier, Dominique</creatorcontrib><creatorcontrib>Nguyen, Duy Minh</creatorcontrib><creatorcontrib>Planson, Dominique</creatorcontrib><creatorcontrib>Konrath, Jens Peter</creatorcontrib><creatorcontrib>Pâques, Gontran</creatorcontrib><creatorcontrib>Dheilly, Nicolas</creatorcontrib><creatorcontrib>Scharnholz, Sigo</creatorcontrib><creatorcontrib>Raynaud, Christophe</creatorcontrib><title>Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection</title><title>Materials science forum</title><description>Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).</description><subject>Electric power</subject><subject>Engineering Sciences</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><issn>1662-9760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LAzEQhoMoWKv_IVeF3Sb7kY9jba0VKhZaTx5CNp2lKdtsyaYu_ntTKnr2NDDzzgPvg9ADJWlBMjHq-z7tjAUXbG1N6iCMXlezlHGZMEHSkvELNKCMZYnkZXaJBiQry6QsOLtGN123IySngrIB-hh_6kY7swU8te0GOtzbsMWLtsdr2B_A63D08QYHcBtwBrB1uJgnKzvBq6MNumoA163HS-1100CDl74NYIJt3S26qnXTwd3PHKL32dN6Mk8Wb88vk_EiMTmTIREyF7wo9KZkVVaLTIqK5GW90VWmc055xY0UxBgGhhSEitpUFTOcV7I0UIDIh-j-zN3qRh283Wv_pVpt1Xy8UKcdySgTkshPGrOP56zxbdd5qH8fKFEntSqqVX9qVVSroloV1aqoVkW1ETI9Q4LXrottt2rXHr2LJf-D-QZQs4yk</recordid><startdate>20110328</startdate><enddate>20110328</enddate><creator>Tournier, Dominique</creator><creator>Nguyen, Duy Minh</creator><creator>Planson, Dominique</creator><creator>Konrath, Jens Peter</creator><creator>Pâques, Gontran</creator><creator>Dheilly, Nicolas</creator><creator>Scharnholz, Sigo</creator><creator>Raynaud, Christophe</creator><general>Trans Tech Publications Ltd</general><general>Trans Tech Publications Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-1617-8757</orcidid><orcidid>https://orcid.org/0000-0001-7473-0039</orcidid><orcidid>https://orcid.org/0000-0003-4671-0844</orcidid></search><sort><creationdate>20110328</creationdate><title>Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection</title><author>Tournier, Dominique ; Nguyen, Duy Minh ; Planson, Dominique ; Konrath, Jens Peter ; Pâques, Gontran ; Dheilly, Nicolas ; Scharnholz, Sigo ; Raynaud, Christophe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-8938744ad56b2f8298b035fdab2a3717b7c980cc6ec04018fcbb6c77b95ce4e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Electric power</topic><topic>Engineering Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tournier, Dominique</creatorcontrib><creatorcontrib>Nguyen, Duy Minh</creatorcontrib><creatorcontrib>Planson, Dominique</creatorcontrib><creatorcontrib>Konrath, Jens Peter</creatorcontrib><creatorcontrib>Pâques, Gontran</creatorcontrib><creatorcontrib>Dheilly, Nicolas</creatorcontrib><creatorcontrib>Scharnholz, Sigo</creatorcontrib><creatorcontrib>Raynaud, Christophe</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tournier, Dominique</au><au>Nguyen, Duy Minh</au><au>Planson, Dominique</au><au>Konrath, Jens Peter</au><au>Pâques, Gontran</au><au>Dheilly, Nicolas</au><au>Scharnholz, Sigo</au><au>Raynaud, Christophe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection</atitle><jtitle>Materials science forum</jtitle><date>2011-03-28</date><risdate>2011</risdate><volume>679-680</volume><spage>567</spage><epage>570</epage><pages>567-570</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><eissn>1662-9760</eissn><abstract>Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.679-680.567</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-1617-8757</orcidid><orcidid>https://orcid.org/0000-0001-7473-0039</orcidid><orcidid>https://orcid.org/0000-0003-4671-0844</orcidid><oa>free_for_read</oa></addata></record>
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1662-9752
1662-9752
1662-9760
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subjects Electric power
Engineering Sciences
title Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T13%3A53%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Avalanche%20Diodes%20with%20Low%20Temperature%20Dependence%20in%204H-SiC%20Suitable%20for%20Parallel%20Protection&rft.jtitle=Materials%20science%20forum&rft.au=Tournier,%20Dominique&rft.date=2011-03-28&rft.volume=679-680&rft.spage=567&rft.epage=570&rft.pages=567-570&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.679-680.567&rft_dat=%3Chal_cross%3Eoai_HAL_hal_02168909v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true