Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2011-03, Vol.679-680, p.567-570
Hauptverfasser: Tournier, Dominique, Nguyen, Duy Minh, Planson, Dominique, Konrath, Jens Peter, Pâques, Gontran, Dheilly, Nicolas, Scharnholz, Sigo, Raynaud, Christophe
Format: Artikel
Sprache:eng
Schlagworte:
Electric power
Engineering Sciences
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).
ISSN:0255-5476
1662-9752
1662-9752
1662-9760
DOI:10.4028/www.scientific.net/MSF.679-680.567