A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

A high ZTvalue of similar to 1.1 at 923 K in the BiCuSeO system is achieved viaheavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCu...

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Veröffentlicht in:Energy & environmental science 2012, Vol.5 (9), p.8543-8547
Hauptverfasser: Li, Jing, Sui, Jiehe, Pei, Yanling, Barreteau, Celine, Berardan, David, Dragoe, Nita, Cai, Wei, He, Jiaqing, Zhao, Li-Dong
Format: Artikel
Sprache:eng
Schlagworte:
Chemical Sciences
Material chemistry
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Zusammenfassung:A high ZTvalue of similar to 1.1 at 923 K in the BiCuSeO system is achieved viaheavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.
ISSN:1754-5692
1754-5706
DOI:10.1039/c2ee22622g