Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

[Display omitted] •2D strain maps in Si around TSV performed using high resolution fast scanning XRD.•Strains in [335] crystallographic direction are small – in the order of 10−4.•Low impact of TSV process on carrier mobility variations close to the TSV at RT.•3D finite element analysis of a TSV structure compare well with experimental data.•Gradient of strains in [335] direction close to the sample surface. Fast-scanning X-ray microscopy is used to directly visualize the local strain and lattice tilt in the silicon neighboring Through Silicon Vias (TSVs). Strain variations of the order of 10−4 were detected and results show that the silicon is slightly strained at room temperature (|ε335|