Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3–100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory–Hu...

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Veröffentlicht in:ACS nano 2012-04, Vol.6 (4), p.3424-3433
Hauptverfasser: Cushen, Julia D, Otsuka, Issei, Bates, Christopher M, Halila, Sami, Fort, Sébastien, Rochas, Cyrille, Easley, Jeffrey A, Rausch, Erica L, Thio, Anthony, Borsali, Redouane, Willson, C. Grant, Ellison, Christopher J
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Block copolymers
Chemical and Process Engineering
Chemical Sciences
Engineering Sciences
Etching
Formations
Material chemistry
Micro and nanotechnologies
Microelectronics
Microscopy, Atomic Force
Oligosaccharides
Oligosaccharides - chemistry
Polymerization
Polymers
Polymers - chemistry
Printing - methods
Self assembly
Silicon - chemistry
Solvents - chemistry
Spin coating
Thin films
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Zusammenfassung:Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3–100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory–Huggins interaction parameters (χ), which enable formation of
ISSN:1936-0851
1936-086X
DOI:10.1021/nn300459r