Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between...

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Veröffentlicht in:Applied physics letters 1999-08, Vol.75 (5), p.728-730
Hauptverfasser: Roschier, Leif, Penttilä, Jari, Martin, Michel, Hakonen, Pertti, Paalanen, Mikko, Tapper, Unto, Kauppinen, Esko I., Journet, Catherine, Bernier, Patrick
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Condensed Matter
Materials Science
Physics
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container_end_page 730
container_issue 5
container_start_page 728
container_title Applied physics letters
container_volume 75
creator Roschier, Leif
Penttilä, Jari
Martin, Michel
Hakonen, Pertti
Paalanen, Mikko
Tapper, Unto
Kauppinen, Esko I.
Journet, Catherine
Bernier, Patrick
description We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.
doi_str_mv 10.1063/1.124495
format Article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02112509v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_02112509v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-fd71000dba360c8f3641dc8988d335cdaf9d31bf029704bcec431ca85a7af1bc3</originalsourceid><addsrcrecordid>eNo9kEtLBDEQhIMouD7AnzBHPcyanp5XjsuirrDgQT2PPXloJJMsyYziv3eWFU_dXXzVFMXYFfAl8BpvYQlFWYrqiC2AN02OAO0xW3DOMa9FBafsLKXP-awKxAV7e7b-3elcOy3HGHw2RvLJpjHEbCCls2CyYXKj_SbntMokxX6mPPkwTr3OpjT7syTJ-_2yi2EWB_J2NzkabfAX7MSQS_ryb56z1_u7l_Um3z49PK5X21xiJcbcqAbmUKonrLlsDdYlKNmKtlWIlVRkhELoDS9Ew8tealkiSGorashAL_Gc3Rz-fpDrdtEOFH-6QLbbrLbdXuMFQFFx8QUze31gZQwpRW3-DcC7fYsddIcW8RfIu2XM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Roschier, Leif ; Penttilä, Jari ; Martin, Michel ; Hakonen, Pertti ; Paalanen, Mikko ; Tapper, Unto ; Kauppinen, Esko I. ; Journet, Catherine ; Bernier, Patrick</creator><creatorcontrib>Roschier, Leif ; Penttilä, Jari ; Martin, Michel ; Hakonen, Pertti ; Paalanen, Mikko ; Tapper, Unto ; Kauppinen, Esko I. ; Journet, Catherine ; Bernier, Patrick</creatorcontrib><description>We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.124495</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Condensed Matter ; Materials Science ; Physics</subject><ispartof>Applied physics letters, 1999-08, Vol.75 (5), p.728-730</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-fd71000dba360c8f3641dc8988d335cdaf9d31bf029704bcec431ca85a7af1bc3</citedby><cites>FETCH-LOGICAL-c359t-fd71000dba360c8f3641dc8988d335cdaf9d31bf029704bcec431ca85a7af1bc3</cites><orcidid>0000-0003-1727-8810 ; 0000-0002-3328-317X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02112509$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Roschier, Leif</creatorcontrib><creatorcontrib>Penttilä, Jari</creatorcontrib><creatorcontrib>Martin, Michel</creatorcontrib><creatorcontrib>Hakonen, Pertti</creatorcontrib><creatorcontrib>Paalanen, Mikko</creatorcontrib><creatorcontrib>Tapper, Unto</creatorcontrib><creatorcontrib>Kauppinen, Esko I.</creatorcontrib><creatorcontrib>Journet, Catherine</creatorcontrib><creatorcontrib>Bernier, Patrick</creatorcontrib><title>Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation</title><title>Applied physics letters</title><description>We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.</description><subject>Condensed Matter</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLBDEQhIMouD7AnzBHPcyanp5XjsuirrDgQT2PPXloJJMsyYziv3eWFU_dXXzVFMXYFfAl8BpvYQlFWYrqiC2AN02OAO0xW3DOMa9FBafsLKXP-awKxAV7e7b-3elcOy3HGHw2RvLJpjHEbCCls2CyYXKj_SbntMokxX6mPPkwTr3OpjT7syTJ-_2yi2EWB_J2NzkabfAX7MSQS_ryb56z1_u7l_Um3z49PK5X21xiJcbcqAbmUKonrLlsDdYlKNmKtlWIlVRkhELoDS9Ew8tealkiSGorashAL_Gc3Rz-fpDrdtEOFH-6QLbbrLbdXuMFQFFx8QUze31gZQwpRW3-DcC7fYsddIcW8RfIu2XM</recordid><startdate>19990802</startdate><enddate>19990802</enddate><creator>Roschier, Leif</creator><creator>Penttilä, Jari</creator><creator>Martin, Michel</creator><creator>Hakonen, Pertti</creator><creator>Paalanen, Mikko</creator><creator>Tapper, Unto</creator><creator>Kauppinen, Esko I.</creator><creator>Journet, Catherine</creator><creator>Bernier, Patrick</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-1727-8810</orcidid><orcidid>https://orcid.org/0000-0002-3328-317X</orcidid></search><sort><creationdate>19990802</creationdate><title>Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation</title><author>Roschier, Leif ; Penttilä, Jari ; Martin, Michel ; Hakonen, Pertti ; Paalanen, Mikko ; Tapper, Unto ; Kauppinen, Esko I. ; Journet, Catherine ; Bernier, Patrick</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-fd71000dba360c8f3641dc8988d335cdaf9d31bf029704bcec431ca85a7af1bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Condensed Matter</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roschier, Leif</creatorcontrib><creatorcontrib>Penttilä, Jari</creatorcontrib><creatorcontrib>Martin, Michel</creatorcontrib><creatorcontrib>Hakonen, Pertti</creatorcontrib><creatorcontrib>Paalanen, Mikko</creatorcontrib><creatorcontrib>Tapper, Unto</creatorcontrib><creatorcontrib>Kauppinen, Esko I.</creatorcontrib><creatorcontrib>Journet, Catherine</creatorcontrib><creatorcontrib>Bernier, Patrick</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roschier, Leif</au><au>Penttilä, Jari</au><au>Martin, Michel</au><au>Hakonen, Pertti</au><au>Paalanen, Mikko</au><au>Tapper, Unto</au><au>Kauppinen, Esko I.</au><au>Journet, Catherine</au><au>Bernier, Patrick</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation</atitle><jtitle>Applied physics letters</jtitle><date>1999-08-02</date><risdate>1999</risdate><volume>75</volume><issue>5</issue><spage>728</spage><epage>730</epage><pages>728-730</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.124495</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0003-1727-8810</orcidid><orcidid>https://orcid.org/0000-0002-3328-317X</orcidid><oa>free_for_read</oa></addata></record>
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1077-3118
language eng
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subjects Condensed Matter
Materials Science
Physics
title Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T07%3A13%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Single-electron%20transistor%20made%20of%20multiwalled%20carbon%20nanotube%20using%20scanning%20probe%20manipulation&rft.jtitle=Applied%20physics%20letters&rft.au=Roschier,%20Leif&rft.date=1999-08-02&rft.volume=75&rft.issue=5&rft.spage=728&rft.epage=730&rft.pages=728-730&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.124495&rft_dat=%3Chal_cross%3Eoai_HAL_hal_02112509v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true