Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between...

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Veröffentlicht in:Applied physics letters 1999-08, Vol.75 (5), p.728-730
Hauptverfasser: Roschier, Leif, Penttilä, Jari, Martin, Michel, Hakonen, Pertti, Paalanen, Mikko, Tapper, Unto, Kauppinen, Esko I., Journet, Catherine, Bernier, Patrick
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Materials Science
Physics
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Zusammenfassung:We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124495