Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-F...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (19)
Hauptverfasser: Nsele, S. D., Escotte, L., Tartarin, J.-G., Piotrowicz, S., Delage, S. L.
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Sprache:eng
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Zusammenfassung:We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Low-frequency noise measurements confirm the presence of field-assisted emission from trap states. The 1/f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901906