Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering

Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering

The effect of magnetron power on the room temperature 1.54 μm infra‐red photoluminescence intensity of erbium doped AlN films grown by r.f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensit...

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Veröffentlicht in:Physica status solidi. C 2010-01, Vol.7 (1), p.72-75
Hauptverfasser: Hussain, S. S., Brien, V., Rinnert, H., Pigeat, P.
Format: Artikel
Sprache:eng
Schlagworte:
68.37.Lp
68.55.Ln
68.55.−a
71.55.Eq
78.55.Cr
81.15.Cd
Chemical Sciences
Condensed Matter
Crystallites
Deposition
Erbium
Evolution
Inorganic chemistry
Magnetron sputtering
Material chemistry
Materials Science
Nanocrystals
Optics
Photoluminescence
Physics
Solid state physics
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Zusammenfassung:The effect of magnetron power on the room temperature 1.54 μm infra‐red photoluminescence intensity of erbium doped AlN films grown by r.f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 at%). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1634
1610-1642
DOI:10.1002/pssc.200982606